Aluminium electrodes effect the operation of titanium oxide sol-gel memristors

Gale, E., Pearson, D., Kitson, S., Adamatzky, A. and de Lacy Costello, B. (2011) Aluminium electrodes effect the operation of titanium oxide sol-gel memristors. Working Paper. University of the West of England, Bristol.

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Publisher's URL: http://arxiv.org/abs/1106.6293

Abstract

By a comparison between memristors made with aluminium and gold electrodes, this letter demonstrates that aluminium electrodes are an essential component of the TiO$_2$ sol-gel flexible memristor . Both slow varying `analogue' and sudden switching `digital' memristor devices have been observed. Limiting the oxygen exposure of the bottom aluminium electrode favours the creation of digital memristors over analogue ones. A straight-forward fabrication of drop-coated memristors based on sol-gel chemistry is also presented and these show similar behaviour and dependence on electrode material, making them useful as test memristors for experimentation.

Item Type:Report or Working Paper (Working Paper)
Additional Information:Draft version of this paper submitted to arXive.
Uncontrolled Keywords:memristor, memristance, aluminium, effect of electrode metal, titanium dioxide, materials science, sol-gel
Faculty/Department:Faculty of Health and Applied Sciences
Faculty of Environment and Technology > Department of Computer Science and Creative Technologies
ID Code:17062
Deposited By: Dr E. Gale
Deposited On:06 Aug 2012 09:11
Last Modified:30 May 2014 02:21

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