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Aluminium electrodes effect the operation of titanium oxide sol-gel memristors
Gale, E. , Pearson, D. , Kitson, S. , Adamatzky, A. and de Lacy Costello, B. (2011) Aluminium electrodes effect the operation of titanium oxide sol-gel memristors. Working Paper. University of the West of England, Bristol. [Unpublished]
Publisher's URL: http://arxiv.org/abs/1106.6293 AbstractBy a comparison between memristors made with aluminium and gold electrodes, this letter demonstrates that aluminium electrodes are an essential component of the TiO$_2$ sol-gel flexible memristor . Both slow varying `analogue' and sudden switching `digital' memristor devices have been observed. Limiting the oxygen exposure of the bottom aluminium electrode favours the creation of digital memristors over analogue ones. A straight-forward fabrication of drop-coated memristors based on sol-gel chemistry is also presented and these show similar behaviour and dependence on electrode material, making them useful as test memristors for experimentation.
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