Gale, E., Pearson, D., Kitson, S., Adamatzky, A. and de Lacy Costello, B.
Aluminium electrodes effect the operation of titanium oxide sol-gel memristors.
University of the West of England, Bristol.
Available from: http://eprints.uwe.ac.uk/17062
- Draft Version
Publisher's URL: http://arxiv.org/abs/1106.6293
By a comparison between memristors made with aluminium and gold electrodes, this letter demonstrates that aluminium electrodes are an essential component of the TiO$_2$ sol-gel flexible memristor . Both slow varying `analogue' and sudden switching `digital' memristor devices have been observed. Limiting the oxygen exposure of the bottom aluminium electrode favours the creation of digital memristors over analogue ones. A straight-forward fabrication of drop-coated memristors based on sol-gel chemistry is also presented and these show similar behaviour and dependence on electrode material, making them useful as test memristors for experimentation.
Request a change to this item
Total Document Downloads in Past 12 Months