Filamentary extension of the mem-con theory of memristance and its application to titanium dioxide sol-gel memristors

Gale, E., de Lacy Costello, B. and Adamatzky, A. (2012) Filamentary extension of the mem-con theory of memristance and its application to titanium dioxide sol-gel memristors. Working Paper. University of the West of England, Bristol.

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Abstract

Titanium dioxide sol-gel memristors have two different modes of operation, believed to be dependent on whether there is bulk memristance, i.e. memristance throughout the whole volume or filamentary memristance, i.e. memristance caused by the connection of conducting filaments. The mem-con theory of memristance is based on the drift of oxygen vacancies rather than that of conducting electrons and has been previously used to describe bulk memristance in several devices. Here, the mem-con theory is extended to model memristance caused by small filaments of low resistance titanium dioxide and it compares favorably to experimental results for filamentary memristance in sol-gel devices.

Item Type:Report or Working Paper (Working Paper)
Uncontrolled Keywords:mem-con theory, filament, ReRAM, memristor, sol-gel, memristance, memristor
Faculty/Department:Faculty of Health and Applied Sciences
Faculty of Environment and Technology > Department of Computer Science and Creative Technologies
ID Code:17069
Deposited By: Dr E. Gale
Deposited On:07 Aug 2012 11:05
Last Modified:04 Jun 2014 14:08

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