Simplified tunnelling calculations for MOS structures with ultra thin oxides for conductive atomic force microscopy measurements
Frammelsberger, W. print, Benstetter, G. print, Stamp, R. print, Kiely, J. print and Schweinboeck, T. print (2005) Simplified tunnelling calculations for MOS structures with ultra thin oxides for conductive atomic force microscopy measurements. Materials Science and Engineering B, 116 (2). pp. 168-174. ISSN 0921-5107
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Publisher's URL: http:\\dx.doi.org\10.1016/j.mseb.2004.09.027
The research described in this paper forms part of a European project supported by the High-Tech-Offensive, Zukunft Bayern, Germany. This paper describes a new model that allows efficent modelling of current tunnelling through insulating films. Compared with other techniques this model is easy to use and the practical importance of these innovations has been recognised by a number of companies (eg Renesas Technologies) for whom analysis of semiconducting/insulating films have been performed on a commercial basis.
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