Simplified tunnelling calculations for MOS structures with ultra thin oxides for conductive atomic force microscopy measurements

Frammelsberger, W., Benstetter, G., Stamp, R., Kiely, J. and Schweinboeck, T. (2005) Simplified tunnelling calculations for MOS structures with ultra thin oxides for conductive atomic force microscopy measurements. Materials Science and Engineering B, 116 (2). pp. 168-174. ISSN 0921-5107

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Publisher's URL: http:\\dx.doi.org\10.1016/j.mseb.2004.09.027

Abstract

The research described in this paper forms part of a European project supported by the High-Tech-Offensive, Zukunft Bayern, Germany. This paper describes a new model that allows efficent modelling of current tunnelling through insulating films. Compared with other techniques this model is easy to use and the practical importance of these innovations has been recognised by a number of companies (eg Renesas Technologies) for whom analysis of semiconducting/insulating films have been performed on a commercial basis.

Item Type:Article
Uncontrolled Keywords:C-AFM, MOS, tunnelling, ultra-thin oxides
Faculty/Department:Faculty of Environment and Technology
ID Code:5955
Deposited By: R. Upload account
Deposited On:22 Jan 2010 15:11
Last Modified:22 May 2014 14:11

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