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Thickness determination of thin and ultrathin SiO2 films by C-AFM IV spectroscopy
Frammelsberger, W. , Benstetter, G. , Kiely, J. and Stamp, R. (2005) Thickness determination of thin and ultrathin SiO2 films by C-AFM IV spectroscopy. Applied Surface Science, 252 (6). pp. 2375-2388. ISSN 01694332 Full text not available from this repository Publisher's URL: http:\\dx.doi.org\10.1016/j.apsusc.2005.04.010 AbstractResults from a European collaborative project involving UWE, University of Applied Science, Deggendorf and Infineon Technologies are described. The method illustrates clearly for the first time the differences between ellipsometry and AFM measurements of thin oxide films. The novel techniques described have been incorporated into practical reliability testing processes at Infineon Technologies, Munich (Thomas Schweinbock).
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