Thickness determination of thin and ultrathin SiO2 films by C-AFM IV spectroscopy

Frammelsberger, W., Benstetter, G., Kiely, J. and Stamp, R. (2005) Thickness determination of thin and ultrathin SiO2 films by C-AFM IV spectroscopy. Applied Surface Science, 252 (6). pp. 2375-2388. ISSN 01694332

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Publisher's URL: http:\\dx.doi.org\10.1016/j.apsusc.2005.04.010

Abstract

Results from a European collaborative project involving UWE, University of Applied Science, Deggendorf and Infineon Technologies are described. The method illustrates clearly for the first time the differences between ellipsometry and AFM measurements of thin oxide films. The novel techniques described have been incorporated into practical reliability testing processes at Infineon Technologies, Munich (Thomas Schweinbock).

Item Type:Article
Uncontrolled Keywords:AFM, C-AFM, MOS, silicon dioxide, tunnelling
Faculty/Department:Faculty of Environment and Technology
ID Code:5956
Deposited By: R. Upload account
Deposited On:22 Jan 2010 15:11
Last Modified:11 Mar 2014 17:01

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